³ÉÈËVRÊÓƵ

ECSE 533 Physical Basis of Semiconductor Devices (3 credits)

Note: This is the 2014–2015 edition of the eCalendar. Update the year in your browser's URL bar for the most recent version of this page, or click here to jump to the newest eCalendar.

Offered by: Electrical & Computer Engr (Faculty of Engineering)

Overview

Electrical Engineering : Quantitative analysis of diodes and transistors. Semiconductor fundamentals, equilibrium and non-equilibrium carrier transport, and Fermi levels. PN junction diodes, the ideal diode, and diode switching. Bipolar Junction Transistors (BJT), physics of the ideal BJT, the Ebers-Moll model. Field effect transistors, metal-oxide semiconductor structures, static and dynamic behaviour, small-signal models.

Terms: Winter 2015

Instructors: Shih, Ishiang (Winter)

Back to top