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ECSE 433 Physical Basis of Transistor Devices (4 unit茅s)

Offered by: G茅nie 茅lectr. et informatique (G茅nie et l'architecture)

Vue d'ensemble

G茅nie 茅lectrique : Quantitative analysis of diodes and transistors. Semiconductor fundamentals, equilibrium and non-equilibrium carrier transport, and Fermi levels. PN junction diodes, the ideal diode, and diode switching. Bipolar Junction Transistors (BJT), physics of the ideal BJT, the Ebers-Moll model. Field effect transistors, metal-oxide semiconductor structures, static and dynamic behaviour, small-signal models. Laboratory experiments.

Terms: Hiver 2023

Instructors: Szkopek, Thomas (Winter)

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