Specifications/Capabilities
- FE-SEM
- Resolution: sub-nanometre聽from 1 kV to 30 kV.
- High resolution triple in-lens electron detectors聽with Through Lens (TLD, secondary and backscatter mode), In Column (ICD, low-loss backscatter), and Mirror (MD, no-loss backscatter) detectors.
- Scanning transmission electron microscopy (STEM) detector with bright-field (BF), dark-field (DF), and high-angle annular dark-field (HAADF) segments.
- Electron beam deceleration for 50 V effective landing voltage.
- 5-axis stage with 150 mm X-Y range and full rotation.
- Integrated plasma cleaner to minimize contamination.
- FIB (Gallium ion source)
- Resolution: 2.5 nm at 30 kV.
- High current for fast milling of large areas.
- High efficiency secondary ion detector.
- Electron flood gun for ion charge compensation.
- Integrated beam current measurement to allow faster ion beam calibrations while samples are already in the chamber.
- Real time monitoring of milling and deposition process.
- Cryo-EasyLift nanomanipulator for removing transmission electron microscopy (TEM) room temperature and cryo-lamella.
- Gas injection system chemistries
- Platinum deposition.
- Tungsten deposition.
- Carbon deposition.
- Selective carbon etching.
- Software packages
- Auto Slice and View 鈥� Automated sequential milling and image capture generates datasets for 3D reconstruction.
- Avizo聽鈥� 3D reconstruction software.
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